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PE3117C SOT23-3L
PE3117C is a P-Channel Enhancement Mode Power MOSFET with VDS=-30V,ID=-7A,RDS(ON)<22mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V.The screen print of the PE3117C is 3117C.
The PE3117C is available in SOT-23-3L package.
The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
The PE3117C is available in SOT-23-3L package.
The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE3117C Description：
PE3117C is a P-Channel Enhancement Mode Power MOSFET with VDS=-30V,ID=-7A,RDS(ON)<22mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V.The screen print of the PE3117C is 3117C.
The PE3117C is available in SOT-23-3L package.
The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE3117C Features:
PE3117C Features:
VDS = -30V, ID = -7A
RDS(ON) < 22mΩ @ VGS=-10V
RDS(ON) < 32mΩ @VGS=-4.5V
ESD Rating: ≥4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE3117C Applications:
PE3117C Applications:
PWM applications
Load switch
Power management
PE3117C Typical application and pin:
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