Toshiba launches 100V N-channel power MOSFETs to help achieve miniaturization of power circuits
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Model device |
TPH3R10AQM |
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absolute maximum rating |
Drain source voltage VDSS (V) |
100 |
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Drain current (DC) ID (A) |
Tc＝25℃ |
120 |
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Junction temperature Tch (℃) |
175 |
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Electrical characteristics |
Drain source conduction resistance RDS (ON) Maximum value (m Ω) |
VGS＝10V |
3.1 |
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VGS＝60V |
6.0 |
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Total gate charge (gate source+gate drain) Qg typical value (nC) |
83 |
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Typical value of gate switch charge Qsw (nC) |
32 |
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Typical Qoss value of output charge (nC) |
88 |
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Typical value of input capacitance Ciss (pF) |
5180 |
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package |
name |
SOP Advance(N) |
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Typical size value (mm) |
4.9×6.1 |
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Inventory inquiry and purchase |
online purchase |
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