Core can release SiC-MOS intelligent power module
Time:2023-07-26
Views:789
IPM29 SiC_ The new product of MOS intelligent power module integrates a new generation of N-channel enhanced 1200V-SiC internally_ As a compact 1200V level package, this SiC MOSFET IPM is designed with MOSFET chips and optimized SOI process 6-channel gate driver chips. It is easy to use and has customized and optimized driver parts for SIC, effectively reducing switch oscillations. In addition, it adopts compact packaging. Thanks to the use of DBC substrate with high thermal conductivity, it has good thermal performance and sufficient Galvanic isolation level capability, and has excellent power density, reliability and performance. It has been optimized for related applications and is a personalized product designed for an efficient inverter platform for efficient motor drive and active power correction circuits. For example, heating, ventilation, air conditioning, fan motors, car mounted air conditioning, and three-phase power factor correction.
Fill the high-frequency application demand of high-voltage platforms in the IPM product market.
IPM29 SiC_ The MOS new series of production drivers integrate bootstrap circuits, integrated enabling and adjustable fault output (FO), anti direct interlocking, undervoltage protection, and temperature output functions. The optimized high-voltage gate drive is combined with the integrated high-speed and low impedance SiC_ MOSFETS inverter bridge greatly improves the EMI characteristics and switching losses of the product, making it suitable for motor drive applications with high-frequency switching requirements.
At present, the specification level of the product is 20A/1200V>XNC20S12FT.
Product Features
1. Integrated 1200V/20A high-voltage gate drive and supporting high-speed switch SiC_ MOS inverter topology
2. Optimization Drive and SiC_ MOS switch, reducing switch losses and optimizing EMI characteristics
3. Three-phase full bridge inverter topology with open lower bridge emitter, suitable for various motor drive scenarios
4. Drive integrated bootstrap diode with current limiting resistor
5. Built in undervoltage protection, overcurrent protection, interlocking, adjustable fault output, and temperature output (VOT)
6. Fully compatible with 3.3V and 5V drive input signals
7. Insulation voltage level: 2500Vac
Internal topology
Whole machine application testing
32khz carrier frequency sampling
15A current sampling
Temperature rise curve
The new XNC20S12FT SiC intelligent power module has performed well in the overall operation experiment, with good temperature rise performance at a high operating carrier frequency (32KHz) and a load current of 80% of the rated current. The current and voltage waveforms are stable without obvious sharp interference, ensuring the stable and efficient operation of the motor.
※ For specific product information, please consult our sales personnel or request product specifications（ service@invsemi.com ）.
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