The low-temperature drift and high-precision operational amplifier of Italian semiconductor increase the operating temperature

    The input offset voltage of these two operational amplifiers is extremely low, with a typical value of 3.5 at 25 ° C μ V; The typical value of the input bias current at 25 ° C is 30pA. The temperature drift of these two parameters is extremely low, with a maximum input offset voltage of 70 at 25 ° C μ V. Rated at 100 throughout the entire temperature range μ V; At 25 ° C, the maximum input bias current rating is 200pA, and it is 225pA throughout the entire temperature range.

    The operating temperature range of TSZ181H1 and TSZ182H1 is very wide, which can withstand harsh industrial and automotive application environments. When the operating temperature of the chip is low, it can extend the lifespan of the chip and meet the needs of long-term application operation. This device complies with the AEC-Q100 automotive electronics standard and has 4kV HBM ESD electrostatic discharge resistance.

    In high-precision and high-bandwidth sensor interfaces, TSZ181H1 and TSZ182H1 perform exceptionally well and can be used for precision signal conditioning without calibration. Compared with typical operational amplifiers, they can simplify the manufacturing process of the final product while ensuring higher accuracy. These two devices have a gain bandwidth of 3MHz and a working current of only 5V 1mA, resulting in a very high speed to power ratio. The wide power supply voltage of 2.2V to 5.5V maximizes the available dynamic range for rail to rail input and output.

    These two operational amplifiers have now been put into production and are available in SOT23-5 or SO8 packaging options.