Vishay introduces a new 650VE series power MOSFET with advanced performance level in the industry

    Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of a new fourth generation 650 V E series power MOSFET - SiHP054N65E, improving energy efficiency and power density in communication, industrial, and computing applications. The on resistance of Vishay Siliconix n-channel SiHP054N65E is reduced by 48.2% compared to previous generation devices, and the product of on resistance and gate charge is reduced by 59%. This parameter is an important coefficient of merit (FOM) for 650 V MOSFETs in power conversion applications.

    Vishay‘s rich MOSFET technology fully supports the power conversion process, covering various advanced high-tech devices that require high-voltage input to low-voltage output. With the launch of SiHP054N65E and the release of other fourth generation 600 V E series devices, Vishay can meet the requirements of improving energy efficiency and power density in the early stages of power system architecture design, including power factor correction (PFC) and subsequent DC/DC converter brick power supplies. Typical applications include servers, edge computing and data storage; UPS; High Intensity Discharge (HID) lamps and fluorescent ballasts; Solar inverters; Welding equipment; Induction heating; Motor drive; And a battery charger.

    SiHP054N65E adopts Vishay‘s advanced high-energy efficiency E-series super junction technology, with a typical on-resistance of only 0.051 Ω at 10V, thereby increasing the rated power to support various applications above 2 kW. The device meets the requirements of the Open Rack V3 (ORV3) standard for open computing projects. In addition, the ultra-low gate charge of this MOSFET drops to 72 nC. The FOM of the device is 3.67 Ω * nC, which is 1.1% lower than similar competitors MOSFETs. These parameters indicate a reduction in conduction and switching losses, thereby achieving energy-saving effects and improving energy efficiency. The device meets the special requirements of the server power supply titanium effect, or the communication power supply reaches a peak efficiency of 96%.

    The typical values of effective output capacitors Co (er) and Co (tr) of MOSFETs recently released are only 115 pF and 772 pF, respectively, which can improve the switching performance of hard switching topologies, such as PFC, half bridge, and dual switch forward designs. The product FOM of the resistance and Co (tr) of the device is as low as 5.87 W * pF, reaching the industry‘s advanced level. SiHP054N65E is packaged in TO-220AB to improve dv/dt durability, comply with RoHS and Vishay green standards, halogen-free, withstand voltage transients in avalanche mode, and ensure that the limit value of 100% passes UIS testing.

    SiHP054N65E can now provide samples and has achieved mass production. For information on the supply cycle, please contact your local sales department.