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PES230N10K TO-252-2L
PES230N10K is an N-channel enhanced mode MOSFET with VDS=100V, ID=50A, RDS(ON)<23mΩ@VGS=10V, RDS(ON)<33mΩ@VGS=4.5V.
The PES230N10K is available in a TO-252-2L package.
The PES230N10K uses deep groove technology to provide excellent RDS (ON) and low gate charge. It can be used for a wide variety of applications.
The PES230N10K is available in a TO-252-2L package.
The PES230N10K uses deep groove technology to provide excellent RDS (ON) and low gate charge. It can be used for a wide variety of applications.
PES230N10K Description:
PES230N10K is an N-channel enhanced mode MOSFET with VDS=100V, ID=50A, RDS(ON)<23mΩ@VGS=10V, RDS(ON)<33mΩ@VGS=4.5V.
The PES230N10K is available in a TO-252-2L package.
The PES230N10K uses deep groove technology to provide excellent RDS (ON) and low gate charge. It can be used for a wide variety of applications.
The PES230N10K is available in a TO-252-2L package.
The PES230N10K uses deep groove technology to provide excellent RDS (ON) and low gate charge. It can be used for a wide variety of applications.
PES230N10K General features:
VDS=100V, ID=50A
RDS(ON)<23mΩ @VGS=10V
RDS(ON)< 33mΩ@VGS =4.5V
High power and current handling capability
Get lead-free products
Surface mount assembly
RDS(ON)<23mΩ @VGS=10V
RDS(ON)< 33mΩ@VGS =4.5V
High power and current handling capability
Get lead-free products
Surface mount assembly
PES230N10K Applications:
High-frequency switch
Synchronous rectification
Synchronous rectification
PES230N10K Switch test circuit:
PES230N10K switch waveform:
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