MX2319 Description:
MX2319 is VDS=18V, ID = 7a, RDS (ON) (Typ.) = 17mΩ @VGS = 4.5V, RDS (ON) (Typ.) = 22mΩ @VGS = 2.5 V p-channel MOSFET.
The MX2319 is available in SOT23-3 package.
The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.
This device is suitable for use as a load switching application and a wide variety of other applications.
MX2319 Features:
VDS >=-18V,ID=-7A
RDS(ON)(Typ.)=17mΩ@ VGS=-4.5V
RDS(ON) (Typ.)=22mΩ@VGS=-2.5V
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
MX2319 Applications:
PWM applications
Load switch
Typical applications and pins of MX2319: