CST30100G Description:
CST30100G is an N-channel fast switching Mosfets with BVDSS=30V, RDSON=3.8m Ω, and ID=80A. Provide PDFN5060-8L packaging.
The CST30100G is the high cell density Trench MOSFET, which provide excellent RDSON and gate charge for DC/DC converters application.
The CST30100G meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST30100G Feature:
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30100G Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
30V |
3.8mΩ |
80A |
CST30100G PDFN5060-8L Pin Configuration:
CST30100G Test Circuit:
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