CST4N150 Description:
CST4N150 is an N-channel fast switching Mosfet with BVDSS=150V, RDSON=245mΩ, and ID=4.0A. Provide SOT23-3L packaging.
The CST4N150 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The CST4N150 meet the RoHS and Green Product requirement with full function reliability approved.
CST4N150 Feature：
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST4N150 Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
150V |
245mΩ |
4.0A |
CST4N150 SOT23-3L Pin Configuration:
CST4N150 Test Circuit:
CST4N150 SOT-23-3L Package Information:
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