PED2512L概述：
PED2512L是VDS=18V，ID=10A，RDS(ON)<9.5mΩ@VGS=4.5V，RDS(ON)<9.8mΩ@VGS=4.2V，RDS(ON)<10.5mΩ@VGS=3.8V，RDS(ON)<13mΩ@VGS=2.5V的N沟道MOSFET。PED2512L的丝印是2512，PED2512L提供PDFN2*5-6L封装。
The PED2512L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2512L特性：
VDS = 18V, ID = 10 A
RDS(ON) < 9.5mΩ @ VGS=4.5V
RDS(ON) < 9.8mΩ @ VGS=4.2V
RDS(ON) < 10.5mΩ @ VGS=3.8V
RDS(ON) < 13mΩ @ VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED2512L应用：
PWM applications
Load switch
Power management
Battery Protection
PED2512L典型应用及引脚：
Business consulting
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