PE7165G概述：
PE7165G是VDS=-18V,ID=-65A，RDS(ON)<4mΩ，@VGS=-4.5V，RDS(ON)<5.6mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
PE7165G的丝印是PE7165G.PE7165G提供DFN5x6-8L封装.
The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7165G特性：
PE7165G特性：
VDS = -18V, ID = -65A
RDS(ON) < 4mΩ @ VGS=-4.5V
RDS(ON) < 5.6mΩ @VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE7165G应用：
PE7165G应用：
PWM applications
Load switch
Power management
PE7165G典型应用及引脚：
PE7165G典型应用及引脚：
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