PE2319概述：
    PE2319是VDS>-18V,ID=-7A，RDS(ON)<21mΩ，@VGS=-4.5V，RDS(ON)<28mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE2319提供SOT-23-3L封装.
    The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE2319特性：
VDS > -18V, ID = -7A
RDS(ON) < 21mΩ @VGS=-4.5V
RDS(ON) < 28mΩ @VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package

PE2319应用：
PWM applications
Load switch
Power management

PE2319典型应用及引脚：