PED2310N概述：
PED2310N是VDS=18V，ID=7A，RDS(ON)<16mΩ@VGS=4.5V，RDS(ON)<17mΩ，@VGS=4.2V，RDS(ON)<18mΩ@VGS=3.8V ，RDS(ON)<24mΩ@VGS=2.5V的N沟道MOSFET.PED2310N的丝印是NG23,PED2310N提供DFN2x3-6L封装。
The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2310N特性：
VDS = 18V, ID = 7A
RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 17mΩ @VGS=4.2V
RDS(ON) < 18mΩ @VGS=3.8V
RDS(ON)< 24mΩ @VGS=2.5V
ESD Rating: 4000V HBM
RDS(ON)< 24mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED2310N应用：
PWM applications
Load switch
Power management
PED2310N典型应用及引脚：
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