PED645K概述：
PED645K是VDS=18V，ID=10A，RDS(ON)<6.5mΩ@VGS=4.5V，RDS(ON)<7mΩ@VGS=3.8V，RDS(ON<8.5mΩ@VGS=2.5V的N沟道MOSFET。PED645K的丝印是645K，PED645K提供DFN3x3-8L封装。
The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED645K特性：
VDS = 18V, ID = 10A
RDS(ON) < 6.5mΩ @VGS=4.5V
RDS(ON) < 7mΩ@VGS=3.8V
RDS(ON) < 8.5mΩ @VGS=2.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED645K应用：
PWM applications
Load switch
Power management
Battery protection
PED645K典型应用及引脚：
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