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PED30D08M是VDS=30V，ID=22A，RDS(ON)<22mΩ@VGS=10V，RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。
PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。

The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30D08M概述：

PED30D08M是VDS=30V，ID=22A，RDS(ON)<22mΩ@VGS=10V，RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。

The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30D08M特性：

VDS = 30V, ID = 22A

RDS(ON) < 22mΩ @ VGS=10V

RDS(ON) < 30mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED30D08M应用：

PWM applications

Load switch

Power management

PED30D08M典型应用及引脚：