PE30P11DS概述：
PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17mΩ，@VGS=-10V，RDS(ON)<25mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE30P11DS特性：
VDS = -30V, ID = -10A
RDS(ON) < 17mΩ @ VGS=-10V
RDS(ON) < 25mΩ @VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE30P11DS应用：
PWM applications
Load switch
Power management
PE30P11DS典型应用及引脚图：
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