MX30D10概述：
MX30D10是VDS=30V，ID=10A，RDS(ON)(Typ.)11.5mΩ@Vgs=10V，RDS(ON)(Typ.)14.5mΩ@Vgs=4.5V的双N沟道MOSFET.
MX30D10的丝印是30D10.MX30D10提供SOP-8封装.
The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
MX30D10特性：
VDS =30V，ID =10A
RDS(ON)(Typ.)11.5mΩ @ Vgs=10V
RDS(ON)(Typ.)14.5mΩ @ Vgs=4.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
MX30D10提供SOP8封装
MX30D10应用市场：
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
MX30D10典型应用及引脚图：
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