Description/概述：
CST3030是N-Ch：BVDSS=30V,ID=30A,RDSON=9.5mΩ; P-Ch:BVDSS=-30V,ID=-30A,RDSON=18mΩ的双沟道Mosfets。提供TO252-4封装。
CST3030是N-Ch：BVDSS=30V,ID=30A,RDSON=9.5mΩ; P-Ch:BVDSS=-30V,ID=-30A,RDSON=18mΩ的双沟道Mosfets。提供TO252-4封装。
The CST3030 is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST3030 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features/特性：
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST3030 Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
30V
|
9.5mΩ
|
30A
|
|
-30V
|
18 mΩ
|
-30A
|
CST3030 TO252-4 Pin Configuration:
CST3030 Test Circuit-N:
CST3030 Test Circuit-P:
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