PE2312 Description:
PE2312 is N-Channel: VDS=20V, ID=3A,RDS(ON)<65mΩ@VGS=4.5V,RDS(ON)<90mΩ@VGS=2.5V;P-Channel:VDS=-20V, ID=-2.5A,RDS(ON)<110mΩ@VGS=-4.5V,RDS(ON)<140mΩ@VGS=-2.5V The N+P dual channel enhanced mode power supply Mosfet. Provide SOT-23-6L packaging.
The PE2312 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE2312 General Features:
* N-Channel
* VDS=20V, ID=3A
RDS(ON)<65mΩ@VGS=4.5V
RDS(ON)<90mΩ@VGS=2.5V
* P-Channel
* VDS=-20V, ID=-2.5A
RDS(ON)<110mΩ@VGS=-4.5V
RDS(ON)<140mΩ@VGS=-2.5V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package
PE2312 Application
* PWM applications
* Power management
PE2312 SOT-23-6L Package Information: