CST23G12 Description:
CST23G12 is N-Channel: VDS=20V, ID=3A，RDS(ON)<65mΩ@VGS=4.5V，RDS(ON)<90mΩ@VGS=2.5V；P-Channel：VDS=-20V, ID=-2.5A，RDS(ON)<110mΩ@VGS=-4.5V，RDS(ON)<140mΩ@VGS=-2.5V The N+P dual channel enhanced mode power supply Mosfet. Provide SOT-23-6L packaging.
The CST23G12 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
CST23G12 General Features:
* N-Channel
* VDS=20V, ID=3A
RDS(ON)<65mΩ@VGS=4.5V
RDS(ON)<90mΩ@VGS=2.5V
* P-Channel
* VDS=-20V, ID=-2.5A
RDS(ON)<110mΩ@VGS=-4.5V
RDS(ON)<140mΩ@VGS=-2.5V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package
CST23G12 Application:
* PWM applications
* Power management
CST23G12 Test Circuit：
CST23G12 SOT-23-6L Package Information：
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