MXN035N02是VDS=20V, ID=56A，RDS(ON)(Typ.)=4.7mΩ@VGS=2.5V，RDS(ON)(Typ.)=3.5mΩ@VGS=4.5V的N沟道MOSFET.

    MXN035N02的丝印是035N02.MXN035N02提供DFN5*6-8L封装.

    The MXN035N02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications.