Service Hotline: 13823761625

Support

Contact Us

You are here:Home >> Support >> Technology

Technology

Texas Instruments Enters Medium Voltage Gallium Nitride, Further Replacing Traditional Silicon Based Markets

Time:2024-03-17 Views:236
     Recently, Texas Instruments has launched a brand new 100V gallium nitride - LMG2100 and LMG3100 series products, filling the company‘s gap in the medium voltage market around 100V. With the help of next-generation gallium nitride and thermally enhanced double-sided cooling packaging technology, thermal design for medium pressure applications can be simplified and ultra-high power density greater than 1.5kW/in3 can be achieved.
    Dr. Yang Fei, the head of the gallium nitride business at Texas Instruments, gave a detailed introduction to the product and the new trends of gallium nitride in the medium voltage market.
Texas Instruments Broad Portfolio of Gallium Nitride Products
Power density runs through the trend of power supply design
    Yang Fei stated that with the increasing complexity of applications in industries such as AI, electric vehicles, and energy, the power consumption of processors and systems is also increasing, which puts higher demands on the power grid and power supply. While the power is increasing, the size of the entire system remains unchanged. For example, the server is still a traditional rack, the size of the power supply left in the car remains unchanged, and the new energy industry also needs equipment to become smaller and more integrated.
    The improvement of power density is usually closely related to the development of other fields such as efficiency or cost. Generally speaking, a fundamental improvement in power conversion efficiency can reduce the size of the solution. Reducing size will result in a series of chain reactions, with fewer physical materials, fewer components, better cost structure, more integrated solutions, and lower overall cost of ownership, thereby achieving cost savings.
    Gallium nitride, one of the representative third-generation semiconductors, has lower switching losses and higher switching frequencies compared to traditional silicon devices. A higher switching frequency allows for the selection of smaller inductors, transformers, and capacitors, thereby improving the power density of the power system.
    "The specific improvement in system efficiency depends on the topology. For example, for micro inverters, the efficiency of silicon devices is generally between 94% and 96%. If gallium nitride is used, it can easily reach 98%." Yang Fei gave an example.
    Of course, there are other applications, such as co drive systems. The electric drive system can optimize parameters such as motor, output THD, heat dissipation, and cost by increasing the design frequency of the power supply.
Power optimizer block diagram
Highly integrated gallium nitride
    Yang Fei said that due to the high frequency of Gan, the dv/dt and di/dt of switches are fast switching, which brings great challenges to the design of drivers and PCB wiring.
    "Ti‘s approach is to integrate the power device and driver of GaN. By optimizing the internal parameters and driver, we can give full play to the advantages of GaN. Users do not need to consider additional layout and wiring issues, but also ensure product consistency." Yang Fei explained.
Lmg2100 product function diagram
    According to the data given by Ti, compared with traditional silicon, the Gan system with integrated drive can reduce the PCB area by 40%. On the one hand, it is realized by Gan, and on the other hand, it simplifies the drive design through high integration.
    In addition to driving, TI‘s Gan products also integrate many protection functions, including over-current, short circuit, under voltage, current detection, over temperature protection, etc., such as internal bootstrap power supply voltage clamp, which can prevent Gan FET from over driving.
    The other is ti‘s innovation in packaging. In this new product, Ti adopts double-sided cooling packaging technology to enhance the heat dissipation level and further improve the power density.
    Yang Fei said that dc/dc conversion module manufacturers have accepted the advantages of gallium nitride and are in various development processes. Each manufacturer has its own unique topology, optimization and other different considerations. Therefore, there is little demand for the replaceability of compatibility at present, and customers do not need the compatibility of products from different manufacturers. Therefore, products with higher integration are currently the preferred way for customers to accelerate their innovation process.
Wide application of medium voltage gallium nitride
    In TI‘s white paper Gan will innovate the electronic design of four medium voltage applications, Ti pointed out that in addition to the high-voltage Gan (rated value > =600v) already adopted in the industry, the new medium voltage Gan solution (rated value 80v-200v) is also increasingly popular, which can achieve higher power density and efficiency in the power system that cannot be supported before high-voltage Gan.
    Ti cited four potential application explosion points of medium voltage gallium nitride. It includes dc/dc in solar micro inverter and power optimizer, power supply unit (PSU), intermediate bus converter (IBC), battery backup unit in server, telecommunication power supply and motor drive.
Server power block diagram
    In addition, scenes including general DC / DC conversion, class D audio amplifier, battery test and formation equipment can make full use of the characteristics of high switching frequency and low power loss of GaN. For example, for precision servo systems, Gan can reduce circuit size, improve torque and reduce ripple. For class D audio amplifiers, Gan can improve the working frequency, maintain high efficiency, and reduce the signal distortion.
    In order to fully reflect the advantages of Gan, Ti also launched six reference designs at one go, covering all aspects of applications.
Reference design list
summary
    Gallium nitride is widely used in mobile phone chargers, which proves that the market is more and more accepting of this product and more aware of its high power density characteristics. As Ti and other large power suppliers enter the medium voltage market, it is believed that more and more power related scenarios will try gallium nitride, and its advantages will not only be fully reflected in fast charging.











   
      
      
   
   


    Disclaimer: This article is transferred from other platforms and does not represent the views and positions of this site. If there is any infringement or objection, please contact us to delete it. thank you!
    BD手机网页版官方登录入口-半岛彩票官方网站 ChipSourceTek

Baidu
map