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N+P-MOS

CST30G30D PDFN3333-8L

    CST30G30D是N-Ch:BVDSS=30V,RDSON=9.5mΩ,ID=20A;P-Ch:BVDSS=-30V,RDSON=16mΩ,ID=-20A的N+P双通道快速切换Mosfets。提供PDFN3333-8L封装。
    The CST30G30D is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST30G30D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
    CST30G30D Description/描述:
        CST30G30D是N-Ch:BVDSS=30V,RDSON=9.5mΩ,ID=20A;P-Ch:BVDSS=-30V,RDSON=16mΩ,ID=-20A的N+P双通道快速切换Mosfets。提供PDFN3333-8L封装。
        The CST30G30D is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST30G30D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

    CST30G30D Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST30G30D Product Summary/产品概览:
    BVDSS
    RDSON
    ID

    30V

    9.5mΩ

    20A

    -30V

    16 mΩ

    -20A


    CST30G30D PDFN3333-8L Pin Configuration/引脚配置:
    CST30G30D Test Circuit-N/测试电路-N:


    CST30G30D Test Circuit-P/测试电路-P:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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