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PE8306H是VDS=30V，ID=6A，RDS(ON)<26mΩ@VGS=10V，RDS(ON)<40mΩ@VGS=4.5V的N沟道MOSFET。
PE8306H的丝印是8306H。PE8306H提供SOT-23-3L封装。

The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8306H概述：

PE8306H是VDS=30V，ID=6A，RDS(ON)<26mΩ@VGS=10V，RDS(ON)<40mΩ@VGS=4.5V的N沟道MOSFET。
PE8306H的丝印是8306H。PE8306H提供SOT-23-3L封装。

The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8306H特性：

VDS = 30V, ID = 6A

RDS(ON) < 26mΩ @ VGS=10V

RDS(ON) < 40mΩ @ VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8306H应用：

PWM applications

Load switch

Power management

PE8306H典型应用及引脚：