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PE8250K是VDS=20V,ID=50A，RDS(ON)<6mΩ，@VGS=4.5V，RDS(ON)<8mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.

The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8250K概述：

PE8250K是VDS=20V,ID=50A，RDS(ON)<6mΩ，@VGS=4.5V，RDS(ON)<8mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.

The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8250K特性：

VDS = 20V, ID = 50A

RDS(ON) < 6mΩ @ VGS=4.5V

RDS(ON) < 8mΩ @ VGS=2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8250K应用：

PWM applications

Load switch

PE8250K典型应用及引脚：