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PE3050K是VDS=30V,ID=50A，RDS(ON)<8.5mΩ，@VGS=10V，RDS(ON)<14mΩ，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.
PE3050K的丝印是3050K.PE3050K提供TO-252-2L封装.

The PE3050K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE3050K概述：

PE3050K是VDS=30V,ID=50A，RDS(ON)<8.5mΩ，@VGS=10V，RDS(ON)<14mΩ，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.PE3050K的丝印是3050K.PE3050K提供TO-252-2L封装.

The PE3050K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE3050K特性：

VDS = 30V, ID = 50A

RDS(ON) < 8.5mΩ @ VGS=10V

RDS(ON) < 14mΩ@VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE3050K应用：

Battery management

Motor controller and driver

PWM applications

Load switch

PE3050K典型应用及引脚图：