HYG090N06LS1C2概述：
HYG090N06LS1C2是N沟道增强型功率MOSFET，HYG090N06LS1C2是60V/60AR的N沟MOSFET，RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V 、RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V/HYG090N06LS1C2丝印G090N06，
HYG090N06LS1C2提供PDFN5*6-8L封装。
HYG090N06LS1C2提供PDFN5*6-8L封装。
HYG090N06LS1C2特性：
60V/60A
R DS(ON) = 7.7 mΩ(typ.)@V GS = 10V
R DS(ON) = 11.8 mΩ(typ.)@V GS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available (RoHS Compliant)
HYG090N06LS1C2应用：
High Frequency Point-of-Load Synchronous Buck Converter
Power Tool Application
Networking DC-DC Power System
HYG090N06LS1C2 ORDERING INFORMATION:
| HYG090N06LS1C2 ORDERING INFORMATION | |
| C2 G090N06 XYMXXXXXX |
Package Code C2: PPAK5*6-8L Date Code XYMXXXXXX |
HYG090N06LS1C2典型应用电路及封装图：
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