MX6018是VDS=60V，ID=18A,RDS(ON)(Typ.)10mΩ@Vgs=10V,RDS(ON)(Typ.)13.5mΩ@Vgs=4.5V的N沟道增强型功率MOSFET，
    MX6018丝印：6018，MX6018提供SOP8封装，
    The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.

MX6018特性：

VDS =60V，ID=18A

RDS(ON)(Typ.)10mΩ @ Vgs=10V

RDS(ON)(Typ.)13.5mΩ @ Vgs=4.5V

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Special process technology for high ESD capability

Good stability and uniformity with high EAS Excellent package for good heat dissipation

MX6018丝印：6018

MX6018提供SOP8封装

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply