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MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5mΩ，@VGS=4.5V，RDS(ON)(Typ.)=7mΩ的N沟道MOSFET.
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.

The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device can be used for a variety of applications

MXN3016M概述：

MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5mΩ，@VGS=4.5V，RDS(ON)(Typ.)=7mΩ的N沟道MOSFET.
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.

The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device can be used for a variety of applications

MXN3016M特性：

VDS =30V，ID =45A

@VGS=10V RDS(ON)(Typ.)=5mΩ

@VGS=4.5V RDS(ON)(Typ.)=7mΩ

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

MXN3016M应用：

DC/DC Converters in Computing, Servers, and POL

Isolated DC/DC Converters in Telecom and Industrial

Uninterruptible Power Supply

MXN3016M典型应用及引脚图：