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PE60D58是VDS=60V, ID=8A，RDS(ON)<18mΩ@VGS=10V，RDS(ON)<22mΩ@VGS=4.5V的N沟道MOSFET.
PE60D58提供SOP8封装.

The PE60D58S uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications.

PE60D58S Description:
PE60D58是VDS=60V, ID=8A，RDS(ON)<18mΩ@VGS=10V，RDS(ON)<22mΩ@VGS=4.5V的N沟道MOSFET.PE60D58提供SOP8封装.

The PE60D58S uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications.

PE60D58S General Features:

VDS = 60V, I D=8A
RDS(ON) < 18mΩ @ V GS =10V

RDS(ON) < 22mΩ @ V GS =4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE60D58S Application

PWM applications

Load switch

Power management

PE60D58S典型应用及引脚图: