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PE5890K TO-252-2L

    PE5890K是VDS=85V, ID=90A,RDS(ON)<6mΩ@VGS=10V的N通道增强模式电源Mosfet。提供TO-252-2L封装。
    The PE5890K uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE5890K Description/概述:
        PE5890K是VDS=85V, ID=90A,RDS(ON)<6mΩ@VGS=10V的N通道增强模式电源Mosfet。提供TO-252-2L封装。
        The PE5890K uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE5890K General Features/一般特征:
    VDS=85V, ID=90A
    RDS(ON)<6mΩ@VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE5890K Application/应用:
    PWM applications
    Load switch
    Power management


    PE5890K Typical Electrical and Thermal Characteristics:
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