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PE8460K是VDS=40V，ID=60A，RDS(ON)<9mΩ @VGS=10V，RDS(ON)<13mΩ @VGS=4.5V的N沟道MOSFET。
PE8460K的丝印是PE8460K，PE8460K提供TO-252-2L封装。

The PE8460K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8460K概述：

PE8460K是VDS=40V，ID=60A，RDS(ON)<9mΩ @VGS=10V，RDS(ON)<13mΩ @VGS=4.5V的N沟道MOSFET。
PE8460K的丝印是PE8460K，PE8460K提供TO-252-2L封装。

The PE8460K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8460K特性：

VDS = 40V, ID = 60A

RDS(ON) < 9mΩ @ VGS=10V

RDS(ON) < 13mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8460K应用：

PWM applications

Load switch

Power management

PE8460K典型应用及引脚：