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PE8370G是VDS=30V，ID=70A，RDS(ON)<3.9mΩ@VGS=10V，RDS(ON)<5.5mΩ@VGS=4.5V的N沟道MOSFET。
PE8370G的丝印是PE8370G，PE8370G提供DFN5x6-8L封装。

The PE8370G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8370G概述：

PE8370G是VDS=30V，ID=70A，RDS(ON)<3.9mΩ@VGS=10V，RDS(ON)<5.5mΩ@VGS=4.5V的N沟道MOSFET。
PE8370G的丝印是PE8370G，PE8370G提供DFN5x6-8L封装。

The PE8370G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8370G特性：

VDS = 30V, ID = 70A

RDS(ON) < 3.9mΩ @ VGS=10V

RDS(ON) < 5.5mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8370G应用：

Battery management

Motor controller and driver

PWM applications

Load switch

PE8370G典型应用及引脚：