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PE8350G是VDS=30V，ID=50A，RDS(ON)<6mΩ@VGS=10V，RDS(ON)<8.2mΩ@VGS=4.5V的N沟道MOSFET。
PE8350G的丝印是PE8350G，PE8350G提供DFN5x6-8L封装。

The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8350G概述：

PE8350G是VDS=30V，ID=50A，RDS(ON)<6mΩ@VGS=10V，RDS(ON)<8.2mΩ@VGS=4.5V的N沟道MOSFET。
PE8350G的丝印是PE8350G，PE8350G提供DFN5x6-8L封装。

The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8350G特性：

VDS = 30V, ID = 50A

RDS(ON) < 6mΩ @ VGS=10V

RDS(ON) < 8.2mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8350G应用：

Battery management

Motor controller and driver

PWM applications

Load switch

PE8350G典型应用及引脚：