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单P-MOS

PE7290G DFN5x6-8L

    PE7290G是VDS=-20V,ID=-90A,RDS(ON)<2.3mΩ,@VGS=-10V,RDS(ON)<2.5mΩ,@VGS=-4.5V,RDS(ON)<3.7mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7290G的丝印是PE7290G.PE7290G提供DFN5x6-8L封装.
    The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7290G概述:
        PE7290G是VDS=-20V,ID=-90A,RDS(ON)<2.3mΩ,@VGS=-10V,RDS(ON)<2.5mΩ,@VGS=-4.5V,RDS(ON)<3.7mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7290G的丝印是PE7290G.PE7290G提供DFN5x6-8L封装.
        The PE7290G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7290G特性:
    VDS = -20V, ID = -90A
    RDS(ON) < 2.3mΩ @ VGS=-10V
    RDS(ON) < 2.5mΩ @ VGS=-4.5V
    RDS(ON) < 3.7mΩ @ VGS=-2.5V
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation

    PE7290G应用:
    PWM applications
    Load switch
    Battery protection

    PE7290G典型应用及引脚:


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