MX2319概述：
MX2319是VDS>=-18V,ID=-7A,RDS(ON)(Typ.)=17mΩ@VGS=-4.5V,RDS(ON)(Typ.)= 22mΩ@VGS=-2.5V的P沟道MOSFET.
MX2319提供SOT23-3封装。
MX2319提供SOT23-3封装。
The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.
This device is suitable for use as a load switching application and a wide variety of other applications.
This device is suitable for use as a load switching application and a wide variety of other applications.
MX2319特性：
VDS >=-18V,ID=-7A
RDS(ON)(Typ.)=17mΩ@ VGS=-4.5V
RDS(ON) (Typ.)=22mΩ@VGS=-2.5V
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
MX2319应用：
PWM applications
Load switch
MX2319典型应用及引脚：
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