服务热线: 13823761625

半岛官方app下载

联系我们

当前位置:网站首页 >> 半岛官方app下载 >> Mosfet >> 双N-MOS

双N-MOS

MXN3382 DFN3x3-8L

    MXN3382是VDS=18V,ID=22A,@VGS=4.5V,RDS(ON)(Typ.)=4.5m?,@VGS=3.8V,RDS(ON)(Typ.)=4.7m?,@VGS=2.5V,RDS(ON)(Typ.)=6m?的Dual N-Channel MOSFET.
    MXN3382提供DFN3x3-8L封装.
    The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.
    This device is suitable for use as a load switch or in PWM applications. It is ESD protected

    MXN3382概述:
        MXN3382是VDS=18V,ID=22A,@VGS=4.5V,RDS(ON)(Typ.)=4.5m?,@VGS=3.8V,RDS(ON)(Typ.)=4.7m?,@VGS=2.5V,RDS(ON)(Typ.)=6m?的Dual N-Channel MOSFET.MXN3382提供DFN3x3-8L封装.
        The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected

    MXN3382特性:
    VDS =18V,ID =22A
    @VGS=4.5V RDS(ON)(Typ.)=4.5m?
    @VGS=3.8V RDS(ON)(Typ.)=4.7m?
    @VGS=2.5V RDS(ON)(Typ.)=6m?
    ESD Rating: 2000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MXN3382应用:

    PWM application
    Load switch

    MXN3382典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品

Baidu
map