PE8107Z0概述：
PE8107Z0是VDS=18V,ID=7A，RDS(ON)<15mΩ，@VGS=4.5V，RDS(ON)<17mΩ，@VGS=4V，RDS(ON)<18mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8107Z0的丝印是8107.PE8107Z0提供PDFN2x5-6L封装.
The PE8107Z0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8107Z0特性：
VDS = 18V, ID = 7A
RDS(ON) < 15mΩ @ VGS=4.5V
RDS(ON) < 17mΩ @VGS=4V
RDS(ON) < 18mΩ @VGS=3.1V
RDS(ON) < 20mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8107Z0应用：
PWM applications
Load switch
Power management
PE8107Z0典型应用及引脚：
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