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PE8318M是VDS=30V，ID=18A，RDS(ON)<21mΩ@VGS=10V，RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。

The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8318M概述：

PE8318M是VDS=30V，ID=18A，RDS(ON)<21mΩ@VGS=10V，RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。

The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8318M特性：

VDS = 30V, ID = 18A

RDS(ON) < 21mΩ @ VGS=10V

RDS(ON) < 32mΩ@VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8318M应用：

PWM applications

Load switch

Power management

PE8318M典型应用及引脚：