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单P-MOS

PE73100G DFN5*6-8L

    PE73100G是VDS=-30V, ID=-100A,RDS(ON)<3.2mΩ@VGS=-10V,RDS(ON)<5mΩ@VGS=-4.5V的P沟道增强模式电源Mosfet
    The PE73100G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE73100G Description/描述:
        PE73100G是VDS=-30V, ID=-100A,RDS(ON)<3.2mΩ@VGS=-10V,RDS(ON)<5mΩ@VGS=-4.5V的P沟道增强模式电源Mosfet
        The PE73100G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE73100G Features/特性:
    VDS=-30V, ID=-100A
    RDS(ON)<3.2mΩ@VGS=-10V
    RDS(ON)<5mΩ@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE73100G Application/应用:
    PWM applications
    Load switch
    Power management


    PE73100G Typical Electrical and Thermal Characteristics/典型的电气和热特性:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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